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2SK4125
2.0
1.8
RDS(on) -- VGS
ID=7A
1.4
1.2
RDS(on) -- Tc
1.6
1.4
1.0
1.2
1.0
0.8
Tc=75°C
0.8
0.6
=7
ID
A,
V
=1
GS
0V
0.6
0.4
0.2
25°C
--25°C
0.4
0.2
0
3
5
7
9
11
13
15
0
--50
--25
0
25
50
75
100
125
150
Gate-to-Source Voltage, VGS -- V
3
2
| y fs | -- ID
IT11755
VDS=10V
5
3
2
Case Temperature, Tc -- ° C
IS -- VSD
IT11756
VGS=0V
° C
5 °
° C
10
7
5
3
Tc
=
--2
25
C
75
10
7
5
3
2
1.0
7
5
2
1.0
7
5
3
2
0.1
7
5
3
2
3
0.1
2
3
5
7 1.0
2
3
5
7 10
2
3
5
0.01
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1000
7
5
Drain Current, ID -- A
SW Time -- ID
IT11757
VDD=200V
VGS=10V
10000
7
5
3
Diode Forward Voltage, VSD -- V
Ciss, Coss, Crss -- VDS
IT11758
f=1MHz
3
2
Ciss
2
td (off)
1000
7
5
100
3
Coss
7
5
3
tr
td(on)
tf
2
100
7
5
Crss
2
3
2
10
0.1
2
3
5
7 1.0
2
3
5
7 10
2
3
5
10
0
5
10
15
20
25
30
35
40
45
50
ID=17A 1m
10 0 s
DC
0m
e a r
tio
μ s
0 μ
10
9
8
7
6
5
4
3
VDS=200V
ID=17A
Drain Current, ID -- A
VGS -- Qg
IT11759
100
7
5
3
2
10
7
5
3
2
1.0
7
5
3
2
Drain-to-Source Voltage, VDS -- V
ASO
IDP=52A(PW ≤ 10 μ s)
1 s
m
s
op
n
Operation in
this area is
limited by RDS(on).
10
IT11760
10
s
2
0.1
7
5
Tc=25 ° C
0.1
1
0
0
10
20
30
40
50
3
2
0.01
Single pulse
2 3 5 7 1.0
2 3
5 7 10
2 3
5 7 100
2 3
5 7 1000
Total Gate Charge, Qg -- nC
IT12416
Drain-to-Source Voltage, VDS -- V
IT16834
No. A0747-3/7
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